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Nexperia USA Inc. PSMN013-100ES,127
MOSFET N-CH 100V I2PAK
- Manufacturer
- Nexperia USA Inc.
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 4.4mOhm @ 25A, 10V
- Series
- TrenchMOS™
- Power Dissipation (Max)
- 6.9W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- 8-SO
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 33nC @ 4.5V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 4235pF @ 12V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 30.4A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Vgs(th) (Max) @ Id
- 2.15V @ 1mA