Nexperia USA Inc. PSMN012-100YLX

Product Details

Series

HEXFET®

Power Dissipation (Max)

2.5W (Ta), 120W (Tc)

FET Type

N-Channel

Supplier Device Package

D-Pak

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

44nC @ 4.5V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

20V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2980pF @ 10V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

100A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

3V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

6.5mOhm @ 15A, 10V