Nexperia USA Inc. PSMN009-100B,118

Product Details

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

850mOhm @ 3A, 10V

Series

SuperFET® II

Power Dissipation (Max)

28.4W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-220F

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

29nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

800V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1315pF @ 100V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-220-3 Full Pack

Vgs(th) (Max) @ Id

4.5V @ 600µA