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Nexperia USA Inc. PMV130ENEA/DG/B2R

MOSFET N-CH 40V 2.1A TO236AB

Manufacturer
Nexperia USA Inc.
Datasheet
Price
0
Stock
0

Product Details

Vgs (Max)
±30V
Drain to Source Voltage (Vdss)
650V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
2480pF @ 400V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Through Hole
Package / Case
TO-247-3
Vgs(th) (Max) @ Id
4.5V @ 3mA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
99mOhm @ 15A, 10V
Power Dissipation (Max)
227W (Tc)
Series
SuperFET® III
Supplier Device Package
TO-247-3
FET Type
N-Channel
Gate Charge (Qg) (Max) @ Vgs
61nC @ 10V