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Nexperia USA Inc. PMPB215ENEAX
MOSFET N-CH 80V 1.9A SOT1220
- Manufacturer
- Nexperia USA Inc.
- Datasheet
- Price
- 0
- Stock
- 14619
Product Details
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 0V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Vgs(th) (Max) @ Id
- 2.4V @ 26µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 3.5Ohm @ 160mA, 10V
- Series
- SIPMOS®
- Power Dissipation (Max)
- 360mW (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- SOT-23-3
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 1.4nC @ 5V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 39pF @ 25V
- FET Feature
- Depletion Mode
- Current - Continuous Drain (Id) @ 25°C
- 230mA (Ta)