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Nexperia USA Inc. PHM10030DLSX
MOSFET N-CH
- Manufacturer
- Nexperia USA Inc.
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Rds On (Max) @ Id, Vgs
- 100mOhm @ 20A, 20V
- Series
- -
- Power Dissipation (Max)
- 273W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-247
- Packaging
- Bulk
- Gate Charge (Qg) (Max) @ Vgs
- 130nC @ 20V
- Vgs (Max)
- +25V, -10V
- Drain to Source Voltage (Vdss)
- 1200V
- Technology
- SiCFET (Silicon Carbide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2560pF @ 1000V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 41A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 20V
- Mounting Type
- Through Hole
- Package / Case
- TO-247-3
- Vgs(th) (Max) @ Id
- 3V @ 1mA (Typ)
- Operating Temperature
- -55°C ~ 175°C (TJ)