Nexperia USA Inc. BUK7E1R8-40E,127

Product Details

FET Type

N-Channel

Supplier Device Package

TO-220AB

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

137nC @ 4.5V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

40V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

8320pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

195A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Through Hole

Package / Case

TO-220-3

Vgs(th) (Max) @ Id

2.4V @ 150µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

1.9mOhm @ 100A, 10V

Series

HEXFET®, StrongIRFET™

Power Dissipation (Max)

231W (Tc)