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Nexperia USA Inc. BSH205G2VL
MOSFET P-CH 20V 2.3A TO236AB
- Manufacturer
- Nexperia USA Inc.
- Datasheet
- Price
- 0.07
- Stock
- 0
Product Details
- Rds On (Max) @ Id, Vgs
- 120mOhm @ 1A, 4.5V
- Power Dissipation (Max)
- 400mW (Ta)
- Series
- Automotive, AEC-Q101
- Supplier Device Package
- TO-236AB
- FET Type
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 6nC @ 4.5V
- Vgs (Max)
- ±8V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 380pF @ 6V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 2A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 1.8V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Vgs(th) (Max) @ Id
- 1.1V @ 250µA
- Operating Temperature
- 150°C (TJ)