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Microsemi Corporation MDS1100
RF TRANS NPN 65V 1.03GHZ 55TU-1
- Manufacturer
- Microsemi Corporation
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Resistor - Emitter Base (R2)
- 22 kOhms
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 500µA, 10mA
- Series
- -
- Current - Collector (Ic) (Max)
- 100mA
- Packaging
- Tape & Reel (TR)
- Current - Collector Cutoff (Max)
- 500nA (ICBO)
- Part Status
- Active
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 56 @ 5mA, 5V
- Power - Max
- 200mW
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Transistor Type
- NPN - Pre-Biased
- Base Part Number
- DDTC124
- Frequency - Transition
- 250MHz
- Supplier Device Package
- SOT-23-3