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Microsemi Corporation JANTX1N6625US
DIODE GEN PURP 1.1KV 1A D5A
- Manufacturer
- Microsemi Corporation
- Datasheet
- Price
- 15.28
- Stock
- 0
Product Details
- Reverse Recovery Time (trr)
- 0ns
- Current - Reverse Leakage @ Vr
- 200µA @ 1200V
- Voltage - DC Reverse (Vr) (Max)
- 1200V
- Current - Average Rectified (Io)
- 61A (DC)
- Speed
- No Recovery Time > 500mA (Io)
- Operating Temperature - Junction
- -55°C ~ 175°C
- Series
- -
- Diode Type
- Silicon Carbide Schottky
- Part Status
- Active
- Mounting Type
- Through Hole
- Package / Case
- TO-247-2
- Capacitance @ Vr, F
- 2250pF @ 1V, 100kHz
- Supplier Device Package
- TO-247-2