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Microsemi Corporation JANS1N5617US
DIODE GEN PURP 400V 1A D5A
- Manufacturer
- Microsemi Corporation
- Datasheet
- Price
- 87.09
- Stock
- 2
Product Details
- Current - Reverse Leakage @ Vr
- 500nA @ 200V
- Voltage - DC Reverse (Vr) (Max)
- 200V
- Current - Average Rectified (Io)
- 1A
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Operating Temperature - Junction
- -65°C ~ 175°C
- Series
- Military, MIL-PRF-19500/429
- Voltage - Forward (Vf) (Max) @ If
- 1.6V @ 3A
- Packaging
- Bulk
- Diode Type
- Standard
- Part Status
- Active
- Mounting Type
- Through Hole
- Package / Case
- A, Axial
- Capacitance @ Vr, F
- 45pF @ 12V, 1MHz
- Reverse Recovery Time (trr)
- 150ns