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Microsemi Corporation JAN2N6898

MOSFET P-CHANNEL 100V 25A TO3

Manufacturer
Microsemi Corporation
Datasheet
Price
0
Stock
0

Product Details

Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
44nC @ 4.5V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
30V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
3710pF @ 15V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
19A (Ta)
Part Status
Obsolete
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Surface Mount
Package / Case
-
Vgs(th) (Max) @ Id
2.25V @ 250µA
Operating Temperature
-55°C ~ 150°C (TA)
Rds On (Max) @ Id, Vgs
4.5mOhm @ 19A, 10V
Series
-
Power Dissipation (Max)
2.5W
FET Type
N-Channel
Supplier Device Package
-