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Microsemi Corporation JAN1N6628
DIODE GEN PURP 660V 1.75A AXIAL
- Manufacturer
- Microsemi Corporation
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Package / Case
- E, Axial
- Capacitance @ Vr, F
- -
- Reverse Recovery Time (trr)
- 50ns
- Current - Reverse Leakage @ Vr
- 2µA @ 800V
- Voltage - DC Reverse (Vr) (Max)
- 880V
- Current - Average Rectified (Io)
- 1.4A
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Operating Temperature - Junction
- -65°C ~ 175°C
- Series
- Military, MIL-PRF-19500/590
- Voltage - Forward (Vf) (Max) @ If
- 1.4V @ 1.4A
- Packaging
- Bulk
- Diode Type
- Standard
- Part Status
- Active
- Mounting Type
- Through Hole