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Microsemi Corporation JAN1N5620US
DIODE GEN PURP 800V 1A D5A
- Manufacturer
- Microsemi Corporation
- Datasheet
- Price
- 9.03
- Stock
- 0
Product Details
- Current - Reverse Leakage @ Vr
- 500nA @ 200V
- Voltage - DC Reverse (Vr) (Max)
- 200V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Current - Average Rectified (Io)
- 2A
- Series
- -
- Operating Temperature - Junction
- -65°C ~ 175°C
- Packaging
- Bulk
- Voltage - Forward (Vf) (Max) @ If
- 1.2V @ 1A
- Diode Type
- Standard
- Part Status
- Active
- Mounting Type
- Through Hole
- Package / Case
- Axial
- Capacitance @ Vr, F
- 27pF @ 5V, 1MHz
- Supplier Device Package
- Axial
- Reverse Recovery Time (trr)
- 150ns