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Microsemi Corporation JAN1N4454-1
DIODE GEN PURP 50V 200MA DO35
- Manufacturer
- Microsemi Corporation
- Datasheet
- Price
- 0.8
- Stock
- 0
Product Details
- Current - Reverse Leakage @ Vr
- 4.5µA @ 100V
- Voltage - DC Reverse (Vr) (Max)
- 100V
- Current - Average Rectified (Io)
- 10A
- Operating Temperature - Junction
- -65°C ~ 175°C
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Voltage - Forward (Vf) (Max) @ If
- 880mV @ 20A
- Series
- Automotive, AEC-Q101
- Diode Type
- Schottky
- Part Status
- Active
- Mounting Type
- Through Hole
- Package / Case
- TO-220-2
- Capacitance @ Vr, F
- -
- Supplier Device Package
- TO-220AC