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Microsemi Corporation APTMC120HR11CT3AG
POWER MODULE - SIC MOSFET
- Manufacturer
- Microsemi Corporation
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Series
- -
- Gate Charge (Qg) (Max) @ Vgs
- 161nC @ 5V
- FET Type
- 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss)
- 1200V (1.2kV)
- Packaging
- Bulk
- Input Capacitance (Ciss) (Max) @ Vds
- 2788pF @ 1000V
- FET Feature
- Silicon Carbide (SiC)
- Current - Continuous Drain (Id) @ 25°C
- 73A (Tc)
- Part Status
- Active
- Power - Max
- 375W
- Mounting Type
- Chassis Mount
- Package / Case
- Module
- Vgs(th) (Max) @ Id
- 3V @ 12.5mA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 34mOhm @ 50A, 20V
- Supplier Device Package
- SP3