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Microsemi Corporation APTM60H23FT1G
MOSFET 4N-CH 600V 20A SP1
- Manufacturer
- Microsemi Corporation
- Datasheet
- Price
- 43.2
- Stock
- 0
Product Details
- Packaging
- Bulk
- Input Capacitance (Ciss) (Max) @ Vds
- 4367pF @ 25V
- FET Feature
- Standard
- Current - Continuous Drain (Id) @ 25°C
- 37A
- Part Status
- Active
- Power - Max
- 312W
- Mounting Type
- Chassis Mount
- Package / Case
- SP3
- Vgs(th) (Max) @ Id
- 5V @ 1mA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 120mOhm @ 18.5A, 10V
- Supplier Device Package
- SP3
- Series
- -
- Gate Charge (Qg) (Max) @ Vgs
- 96nC @ 10V
- FET Type
- 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss)
- 500V