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Microsemi Corporation APTM10UM01FAG
MOSFET N-CH 100V 860A SP6
- Manufacturer
- Microsemi Corporation
- Datasheet
- Price
- 195.87
- Stock
- 43
Product Details
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 17mOhm @ 100A, 20V
- Series
- -
- Power Dissipation (Max)
- 600W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- SOT-227
- Packaging
- Bulk
- Gate Charge (Qg) (Max) @ Vgs
- 360nC @ 20V
- Vgs (Max)
- +25V, -10V
- Drain to Source Voltage (Vdss)
- 1200V
- Technology
- SiCFET (Silicon Carbide)
- Input Capacitance (Ciss) (Max) @ Vds
- 5960pF @ 1000V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 143A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 20V
- Mounting Type
- Chassis Mount
- Package / Case
- SOT-227-4, miniBLOC
- Vgs(th) (Max) @ Id
- 2.3V @ 2mA