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Microsemi Corporation APTM10DDAM09T3G
MOSFET 2N-CH 100V 139A SP3
- Manufacturer
- Microsemi Corporation
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Series
- -
- Gate Charge (Qg) (Max) @ Vgs
- 200nC @ 10V
- FET Type
- 2 N-Channel (Dual)
- Drain to Source Voltage (Vdss)
- 100V
- Packaging
- Bulk
- Input Capacitance (Ciss) (Max) @ Vds
- 5100pF @ 25V
- FET Feature
- Standard
- Current - Continuous Drain (Id) @ 25°C
- 70A
- Part Status
- Obsolete
- Power - Max
- 208W
- Mounting Type
- Chassis Mount
- Package / Case
- SP3
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 21mOhm @ 35A, 10V
- Supplier Device Package
- SP3