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Microsemi Corporation APTM100UM45FAG
MOSFET N-CH 1000V 215A SP6
- Manufacturer
- Microsemi Corporation
- Datasheet
- Price
- 261.47
- Stock
- 0
Product Details
- Vgs (Max)
- ±20V
- Gate Charge (Qg) (Max) @ Vgs
- 2000nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 100V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 50000pF @ 25V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 590A (Tc)
- Mounting Type
- Chassis Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- Y3-DCB
- Base Part Number
- VMO
- Vgs(th) (Max) @ Id
- 6V @ 110mA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Series
- HiPerFET™
- Rds On (Max) @ Id, Vgs
- 2.1mOhm @ 500mA, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 2200W (Tc)
- Packaging
- Bulk
- Supplier Device Package
- Y3-DCB