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Microsemi Corporation APTM100UM45DAG
MOSFET N-CH 1000V 215A SP6
- Manufacturer
- Microsemi Corporation
- Datasheet
- Price
- 351.89
- Stock
- 1
Product Details
- Vgs (Max)
- 10V
- Drain to Source Voltage (Vdss)
- 55V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 290pF @ 28V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- -
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 5V
- Mounting Type
- Through Hole
- Package / Case
- 8-CDIP Exposed Pad
- Vgs(th) (Max) @ Id
- 2.4V @ 100µA
- Operating Temperature
- -55°C ~ 225°C (TJ)
- Rds On (Max) @ Id, Vgs
- 400mOhm @ 100mA, 5V
- Series
- HTMOS™
- Power Dissipation (Max)
- 50W (Tj)
- FET Type
- N-Channel
- Supplier Device Package
- 8-CDIP-EP
- Packaging
- Bulk
- Gate Charge (Qg) (Max) @ Vgs
- 4.3nC @ 5V