Images are for reference only. See Product Specifications for product details
Microsemi Corporation APTM100DSK35T3G
MOSFET 2N-CH 1000V 22A SP3
- Manufacturer
- Microsemi Corporation
- Datasheet
- Price
- 59.9
- Stock
- 0
Product Details
- FET Type
- 4 N-Channel (H-Bridge) + Bridge Rectifier
- Input Capacitance (Ciss) (Max) @ Vds
- 7000pF @ 25V
- Packaging
- Bulk
- Current - Continuous Drain (Id) @ 25°C
- 39A
- FET Feature
- Standard
- Part Status
- Active
- Power - Max
- 250W
- Package / Case
- SP3
- Vgs(th) (Max) @ Id
- 3.9V @ 2.7mA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 70mOhm @ 39A, 10V
- Supplier Device Package
- SP3
- Gate Charge (Qg) (Max) @ Vgs
- 259nC @ 10V
- Series
- CoolMOS™
- Drain to Source Voltage (Vdss)
- 600V