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Microsemi Corporation APTM100DA33T1G
MOSFET N-CH 1000V 23A SP1
- Manufacturer
- Microsemi Corporation
- Datasheet
- Price
- 36.37
- Stock
- 0
Product Details
- Packaging
- Bulk
- Gate Charge (Qg) (Max) @ Vgs
- 305nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 1000V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 7868pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 23A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Chassis Mount
- Package / Case
- SP1
- Vgs(th) (Max) @ Id
- 5V @ 2.5mA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 396mOhm @ 18A, 10V
- Series
- -
- Power Dissipation (Max)
- 390W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- SP1