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Microsemi Corporation APTM100A12STG
MOSFET 2N-CH 1000V 68A LP8W
- Manufacturer
- Microsemi Corporation
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Series
- -
- Gate Charge (Qg) (Max) @ Vgs
- 308nC @ 10V
- FET Type
- 2 N-Channel (Half Bridge)
- Drain to Source Voltage (Vdss)
- 1000V (1kV)
- Packaging
- Bulk
- Input Capacitance (Ciss) (Max) @ Vds
- 8700pF @ 25V
- FET Feature
- Silicon Carbide (SiC)
- Current - Continuous Drain (Id) @ 25°C
- 36A
- Part Status
- Obsolete
- Power - Max
- 694W
- Mounting Type
- Chassis Mount
- Package / Case
- SP4
- Vgs(th) (Max) @ Id
- 5V @ 5mA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 270mOhm @ 18A, 10V
- Supplier Device Package
- SP4