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Microsemi Corporation APTC90H12T2G
MOSFET 4N-CH 900V 30A SP2
- Manufacturer
- Microsemi Corporation
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Part Status
- Obsolete
- Power - Max
- 462W
- Mounting Type
- Chassis Mount
- Package / Case
- SP3
- Vgs(th) (Max) @ Id
- 3.5V @ 6mA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 60mOhm @ 52A, 10V
- Supplier Device Package
- SP3
- Series
- CoolMOS™
- Gate Charge (Qg) (Max) @ Vgs
- 540nC @ 10V
- FET Type
- 4 N-Channel (H-Bridge)
- Drain to Source Voltage (Vdss)
- 900V
- Packaging
- Tray
- Input Capacitance (Ciss) (Max) @ Vds
- 13600pF @ 100V
- FET Feature
- Super Junction
- Current - Continuous Drain (Id) @ 25°C
- 59A