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Microsemi Corporation APTC60VDAM45T1G
MOSFET 2N-CH 600V 49A SP1
- Manufacturer
- Microsemi Corporation
- Datasheet
- Price
- 53.68
- Stock
- 0
Product Details
- Packaging
- Bulk
- Input Capacitance (Ciss) (Max) @ Vds
- 6800pF @ 25V
- FET Feature
- Standard
- Current - Continuous Drain (Id) @ 25°C
- 19A
- Part Status
- Active
- Power - Max
- 357W
- Mounting Type
- Chassis Mount
- Package / Case
- SP3
- Vgs(th) (Max) @ Id
- 5V @ 2.5mA
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 552mOhm @ 16A, 10V
- Supplier Device Package
- SP3
- Series
- POWER MOS 8™
- Gate Charge (Qg) (Max) @ Vgs
- 260nC @ 10V
- FET Type
- 4 N-Channel (H-Bridge)
- Drain to Source Voltage (Vdss)
- 1000V (1kV)