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Microsemi Corporation APTC60DDAM70T1G
MOSFET 2N-CH 600V 39A SP1
- Manufacturer
- Microsemi Corporation
- Datasheet
- Price
- 43.55
- Stock
- 0
Product Details
- Rds On (Max) @ Id, Vgs
- 180mOhm @ 21A, 10V
- Supplier Device Package
- SP1
- Series
- -
- Gate Charge (Qg) (Max) @ Vgs
- 170nC @ 10V
- FET Type
- 4 N-Channel (H-Bridge)
- Drain to Source Voltage (Vdss)
- 500V
- Packaging
- Bulk
- Input Capacitance (Ciss) (Max) @ Vds
- 5448pF @ 25V
- FET Feature
- Standard
- Current - Continuous Drain (Id) @ 25°C
- 25A
- Part Status
- Active
- Power - Max
- 208W
- Mounting Type
- Chassis Mount
- Package / Case
- SP1
- Vgs(th) (Max) @ Id
- 5V @ 1mA
- Operating Temperature
- -40°C ~ 150°C (TJ)