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Microsemi Corporation APT80SM120J
POWER MOSFET - SIC
- Manufacturer
- Microsemi Corporation
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- FET Type
- N-Channel
- Supplier Device Package
- D3Pak
- Packaging
- Bulk
- Gate Charge (Qg) (Max) @ Vgs
- 235nC @ 20V
- Vgs (Max)
- +25V, -10V
- Drain to Source Voltage (Vdss)
- 1200V
- Technology
- SiCFET (Silicon Carbide)
- Current - Continuous Drain (Id) @ 25°C
- 80A (Tc)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 20V
- Part Status
- Obsolete
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id
- 2.5V @ 1mA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 55mOhm @ 40A, 20V
- Series
- -
- Power Dissipation (Max)
- 625W (Tc)