Microsemi Corporation APT53F80J

Product Details

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

380nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

500V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

8110pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

46A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-274AA

Vgs(th) (Max) @ Id

5V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

100mOhm @ 28A, 10V

Series

-

Power Dissipation (Max)

540W (Tc)

FET Type

N-Channel

Supplier Device Package

SUPER-247™ (TO-274AA)