Microsemi Corporation APT51M50J

Product Details

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

250nC @ 15V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

1500V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

8000pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

8A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

20V

Mounting Type

Through Hole

Package / Case

TO-247-3

Vgs(th) (Max) @ Id

8V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

3.6Ohm @ 4A, 20V

Series

-

Power Dissipation (Max)

700W (Tc)

FET Type

N-Channel

Supplier Device Package

PLUS247™-3