Microsemi Corporation APT43M60L

Product Details

Series

HiPerFET™, PolarP2™

Power Dissipation (Max)

660W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-268

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

120nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

1200V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

6900pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Vgs(th) (Max) @ Id

6.5V @ 1mA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

950mOhm @ 500mA, 10V