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Microsemi Corporation APT19M120J
MOSFET N-CH 1200V 19A SOT-227
- Manufacturer
- Microsemi Corporation
- Datasheet
- Price
- 35.66
- Stock
- 4
Product Details
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 1000V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 15000pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 30A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Chassis Mount
- Package / Case
- SOT-227-4, miniBLOC
- Vgs(th) (Max) @ Id
- 5.5V @ 8mA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 280mOhm @ 17A, 10V
- Series
- HiPerFET™
- Power Dissipation (Max)
- 580W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- SOT-227B
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 455nC @ 10V