Microsemi Corporation APT13F120B

Product Details

Vgs(th) (Max) @ Id

2.6V @ 500µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

180mOhm @ 10A, 8V

Series

-

Power Dissipation (Max)

81W (Tc)

FET Type

N-Channel

Supplier Device Package

PQFN (8x8)

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

6.2nC @ 4.5V

Vgs (Max)

±18V

Drain to Source Voltage (Vdss)

650V

Technology

GaNFET (Gallium Nitride)

Input Capacitance (Ciss) (Max) @ Vds

720pF @ 480V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Part Status

Not For New Designs

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

3-PowerDFN