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Microsemi Corporation 2N6802U

MOSFET N-CH 500V 18LCC

Manufacturer
Microsemi Corporation
Datasheet
Price
0
Stock
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Product Details

Rds On (Max) @ Id, Vgs
320mOhm @ 6.5A, 10V
Series
-
Power Dissipation (Max)
800mW (Ta), 25W (Tc)
FET Type
P-Channel
Supplier Device Package
TO-39
Packaging
Bulk
Gate Charge (Qg) (Max) @ Vgs
34.8nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
100V
Technology
MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C
6.5A (Tc)
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Part Status
Obsolete
Mounting Type
Through Hole
Package / Case
TO-205AF Metal Can
Vgs(th) (Max) @ Id
4V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)