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Microsemi Corporation 2N6800U
MOSFET N-CH 400V 18LCC
- Manufacturer
- Microsemi Corporation
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Rds On (Max) @ Id, Vgs
- 1.5Ohm @ 1.5A, 10V
- Series
- -
- Power Dissipation (Max)
- 800mW (Ta), 25W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-39
- Packaging
- Bulk
- Gate Charge (Qg) (Max) @ Vgs
- 4.46nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 500V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 2.5A (Tc)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Part Status
- Obsolete
- Mounting Type
- Through Hole
- Package / Case
- TO-205AD, TO-39-3 Metal Can
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)