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Microsemi Corporation 1N6630US
DIODE GEN PURP 900V 1.4A D5B
- Manufacturer
- Microsemi Corporation
- Datasheet
- Price
- 18.31
- Stock
- 0
Product Details
- Current - Reverse Leakage @ Vr
- 500nA @ 150V
- Voltage - DC Reverse (Vr) (Max)
- 900V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Current - Average Rectified (Io)
- 1A
- Series
- Military, MIL-PRF-19500/585
- Operating Temperature - Junction
- -65°C ~ 150°C
- Packaging
- Bulk
- Voltage - Forward (Vf) (Max) @ If
- 1.55V @ 1A
- Diode Type
- Standard
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- SQ-MELF, A
- Capacitance @ Vr, F
- 10pF @ 10V, 1MHz
- Supplier Device Package
- D-5A
- Reverse Recovery Time (trr)
- 60ns