Images are for reference only. See Product Specifications for product details

Microsemi Corporation 1N649-1

DIODE GEN PURP 600V 400MA DO35

Manufacturer
Microsemi Corporation
Datasheet
Price
3.67
Stock
1292

Product Details

Mounting Type
Through Hole
Package / Case
TO-247-2
Capacitance @ Vr, F
-
Supplier Device Package
TO-247AC Modified
Current - Reverse Leakage @ Vr
100µA @ 1200V
Voltage - DC Reverse (Vr) (Max)
1200V
Current - Average Rectified (Io)
40A
Speed
Standard Recovery >500ns, > 200mA (Io)
Operating Temperature - Junction
-40°C ~ 150°C
Series
-
Voltage - Forward (Vf) (Max) @ If
1.1V @ 40A
Packaging
Tube
Diode Type
Standard
Part Status
Active