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Microsemi Corporation 1N5622US
DIODE GEN PURP 1KV 1A D5A
- Manufacturer
- Microsemi Corporation
- Datasheet
- Price
- 5.56
- Stock
- 0
Product Details
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Operating Temperature - Junction
- -55°C ~ 150°C
- Series
- Automotive, AEC-Q101
- Voltage - Forward (Vf) (Max) @ If
- 590mV @ 175A
- Packaging
- Tube
- Diode Type
- Schottky
- Part Status
- Active
- Mounting Type
- Through Hole
- Package / Case
- PowerTab®
- Capacitance @ Vr, F
- 8500pF @ 5V, 1MHz
- Supplier Device Package
- PowerTab®
- Current - Reverse Leakage @ Vr
- 2mA @ 30V
- Voltage - DC Reverse (Vr) (Max)
- 30V
- Current - Average Rectified (Io)
- 175A