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Microsemi Corporation 1N5621

DIODE GEN PURP 800V 1A AXIAL

Manufacturer
Microsemi Corporation
Datasheet
Price
0
Stock
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Product Details

Capacitance @ Vr, F
25pF @ 10V, 1MHz
Reverse Recovery Time (trr)
25ns
Current - Reverse Leakage @ Vr
1µA @ 75V
Voltage - DC Reverse (Vr) (Max)
75V
Current - Average Rectified (Io)
1A
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Operating Temperature - Junction
-65°C ~ 175°C
Series
-
Voltage - Forward (Vf) (Max) @ If
875mV @ 1A
Packaging
Bulk
Diode Type
Standard
Part Status
Obsolete
Mounting Type
Through Hole
Package / Case
A, Axial