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Microsemi Corporation 1N5618US
DIODE GEN PURP 600V 1A D5A
- Manufacturer
- Microsemi Corporation
- Datasheet
- Price
- 10.05
- Stock
- 453
Product Details
- Voltage - DC Reverse (Vr) (Max)
- 1200V
- Speed
- No Recovery Time > 500mA (Io)
- Current - Average Rectified (Io)
- 20A
- Series
- -
- Operating Temperature - Junction
- -40°C ~ 175°C
- Packaging
- Tube
- Voltage - Forward (Vf) (Max) @ If
- 1.5V @ 20A
- Diode Type
- Silicon Carbide Schottky
- Part Status
- Active
- Mounting Type
- Through Hole
- Package / Case
- TO-220-2
- Capacitance @ Vr, F
- 1650pF @ 0V, 1MHz
- Supplier Device Package
- TO-220AC
- Reverse Recovery Time (trr)
- 0ns
- Current - Reverse Leakage @ Vr
- 120µA @ 1200V