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Microsemi Corporation 1N5616US
DIODE GEN PURP 400V 1A D5A
- Manufacturer
- Microsemi Corporation
- Datasheet
- Price
- 9.25
- Stock
- 77
Product Details
- Current - Reverse Leakage @ Vr
- 25µA @ 50V
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Voltage - DC Reverse (Vr) (Max)
- 200V
- Series
- -
- Current - Average Rectified (Io)
- 12A
- Packaging
- Bulk
- Operating Temperature - Junction
- -65°C ~ 150°C
- Diode Type
- Standard
- Voltage - Forward (Vf) (Max) @ If
- 1.4V @ 12A
- Part Status
- Active
- Mounting Type
- Chassis, Stud Mount
- Package / Case
- DO-203AA, DO-4, Stud
- Base Part Number
- 1N3891
- Capacitance @ Vr, F
- -
- Supplier Device Package
- DO-4
- Reverse Recovery Time (trr)
- 200ns