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Microsemi Corporation 1N5417US
DIODE GEN PURP 200V 3A D5B
- Manufacturer
- Microsemi Corporation
- Datasheet
- Price
- 13.6
- Stock
- 54
Product Details
- Mounting Type
- Through Hole
- Package / Case
- B, Axial
- Capacitance @ Vr, F
- -
- Reverse Recovery Time (trr)
- 150ns
- Current - Reverse Leakage @ Vr
- 1µA @ 400V
- Voltage - DC Reverse (Vr) (Max)
- 400V
- Current - Average Rectified (Io)
- 3A
- Speed
- Fast Recovery =< 500ns, > 200mA (Io)
- Operating Temperature - Junction
- -65°C ~ 175°C
- Series
- Military, MIL-PRF-19500/411
- Voltage - Forward (Vf) (Max) @ If
- 1.5V @ 9A
- Packaging
- Bulk
- Diode Type
- Standard
- Part Status
- Active