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Microsemi Corporation 1N5417
DIODE GEN PURP 200V 3A AXIAL
- Manufacturer
- Microsemi Corporation
- Datasheet
- Price
- 6.4
- Stock
- 111
Product Details
- Reverse Recovery Time (trr)
- 0ns
- Current - Reverse Leakage @ Vr
- 53µA @ 420V
- Voltage - DC Reverse (Vr) (Max)
- 650V
- Speed
- No Recovery Time > 500mA (Io)
- Current - Average Rectified (Io)
- 34A (DC)
- Series
- -
- Operating Temperature - Junction
- -55°C ~ 175°C
- Packaging
- Tube
- Voltage - Forward (Vf) (Max) @ If
- 1.35V @ 16A
- Diode Type
- Silicon Carbide Schottky
- Part Status
- Active
- Mounting Type
- Through Hole
- Package / Case
- TO-220-2
- Capacitance @ Vr, F
- 783pF @ 1V, 1MHz
- Supplier Device Package
- PG-TO220-2