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Microsemi Corporation 1N5416US
DIODE GEN PURP 100V 3A D5B
- Manufacturer
- Microsemi Corporation
- Datasheet
- Price
- 12.89
- Stock
- 162
Product Details
- Base Part Number
- 1N5614
- Capacitance @ Vr, F
- -
- Supplier Device Package
- D-5A
- Reverse Recovery Time (trr)
- 2µs
- Current - Reverse Leakage @ Vr
- 500nA @ 200V
- Speed
- Standard Recovery >500ns, > 200mA (Io)
- Voltage - DC Reverse (Vr) (Max)
- 200V
- Series
- Military, MIL-PRF-19500/437
- Current - Average Rectified (Io)
- 1A
- Packaging
- Bulk
- Operating Temperature - Junction
- -65°C ~ 200°C
- Diode Type
- Standard
- Voltage - Forward (Vf) (Max) @ If
- 1.3V @ 3A
- Part Status
- Active
- Mounting Type
- Surface Mount
- Package / Case
- SQ-MELF, A