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Microsemi Corporation 1N3600

DIODE GEN PURP 50V 200MA DO35

Manufacturer
Microsemi Corporation
Datasheet
Price
1.06
Stock
0

Product Details

Series
-
Operating Temperature - Junction
-65°C ~ 175°C
Packaging
Tape & Reel (TR)
Voltage - Forward (Vf) (Max) @ If
840mV @ 4A
Diode Type
Schottky
Part Status
Active
Mounting Type
Surface Mount
Package / Case
PowerDI™ 5
Capacitance @ Vr, F
-
Supplier Device Package
PowerDI™ 5
Reverse Recovery Time (trr)
25ns
Current - Reverse Leakage @ Vr
1µA @ 200V
Voltage - DC Reverse (Vr) (Max)
200V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Current - Average Rectified (Io)
4A