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Microchip Technology VP0106N3-G

MOSFET P-CH 60V 0.25A TO92-3

Manufacturer
Microchip Technology
Datasheet
Price
0.76
Stock
680

Product Details

Rds On (Max) @ Id, Vgs
2.4mOhm @ 68A, 10V
Series
HEXFET®
Power Dissipation (Max)
125W (Tc)
FET Type
N-Channel
Supplier Device Package
TO-220-3
Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
60nC @ 4.5V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
30V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
5050pF @ 15V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
130A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Mounting Type
Through Hole
Package / Case
TO-220-3
Vgs(th) (Max) @ Id
2.2V @ 100µA
Operating Temperature
-55°C ~ 175°C (TJ)