Microchip Technology LND150N8-G

Product Details

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

104A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Mounting Type

Surface Mount

Package / Case

8-PowerVDFN

Vgs(th) (Max) @ Id

1.15V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

6.5mOhm @ 10A, 4.5V

Series

NexFET™

Power Dissipation (Max)

2.8W (Ta), 96W (Tc)

FET Type

P-Channel

Supplier Device Package

8-VSON (3.3x3.3)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

14.1nC @ 4.5V

Vgs (Max)

±12V

Drain to Source Voltage (Vdss)

20V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2120pF @ 10V