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Microchip Technology LN100LA-G
MOSFET 2N-CH 1200V
- Manufacturer
- Microchip Technology
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Series
- -
- Gate Charge (Qg) (Max) @ Vgs
- 246nC @ 20V
- FET Type
- 2 N-Channel (Half Bridge)
- Drain to Source Voltage (Vdss)
- 1200V (1.2kV)
- Packaging
- Bulk
- Input Capacitance (Ciss) (Max) @ Vds
- 4750pF @ 1000V
- FET Feature
- Silicon Carbide (SiC)
- Current - Continuous Drain (Id) @ 25°C
- 131A (Tc)
- Part Status
- Active
- Power - Max
- 625W
- Mounting Type
- Chassis Mount
- Package / Case
- D-3 Module
- Vgs(th) (Max) @ Id
- 2.2V @ 5mA (Typ)
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 20mOhm @ 100A, 20V
- Supplier Device Package
- D3