Microchip Technology DN3525N8-G

Product Details

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id

3.9V @ 100µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

2.4mOhm @ 90A, 10V

Series

HEXFET®

Power Dissipation (Max)

140W (Tc)

FET Type

N-Channel

Supplier Device Package

D-PAK (TO-252AA)

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

134nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

40V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

4610pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

90A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Mounting Type

Surface Mount