IXYS IXFX140N30P

Product Details

FET Type

N-Channel

Supplier Device Package

TO-268

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

430nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

100V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

26000pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

320A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

3.5mOhm @ 100A, 10V

Series

GigaMOS™, HiPerFET™, TrenchT2™

Power Dissipation (Max)

1000W (Tc)